SS8550 H(200-350)(SOT-23) 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
JC(T
SS8050
TRANSISTOR (NPN)
SOT-323
FEATURES
Complimentary to SS8550
1. BASE
2. EMITTER
MARKING: Y1
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1.5
A
PC
Collector Power Dissipation
250
mW
Thermal Resistance From Junction To Ambient
500
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
40
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB= 80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
fT
Transition frequency
Cob
Collector output capacitance
VCE=10V, IC= 50mA,
f=30MHz
VCB=10V,IE=0,f=1MHz
100
MHz
15
pF
CLASSIFICATION OF hFE(1)
Rank
Range
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L
H
J
120-200
200-350
300-400
1
A,Jun,2014
B,Sep,2014
Typical Characteristics
Static Characteristic
COMMON
EMITTER
Ta=25℃
0.25
800uA
DC CURRENT GAIN
0.20
600uA
0.15
500uA
0.10
400uA
Ta=25℃
100
300uA
0.05
200uA
IB=100uA
0.00
0.0
0.5
1.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
VCE
2.0
1
VBEsat
2000
Ta=25℃
10
1000
1000 1500
100
COLLECTOR CURRENT
Ta=100℃
100
10
(V)
IC
——
VCE=1V
10
1.5
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR CURRENT
IC
——
Ta=100℃
700uA
IC
(A)
900uA
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
hFE
1000
1000uA
hFE
0.30
IC
(mA)
IC
——
Ta=25℃
Ta=100℃
β=10
β=10
1
100
1
10
COLLECTOR CURRENT
VBE
1500
1000 1500
100
IC
1
10
(mA)
100
COLLECTOR CURRENT
—— IC
Cob/ Cib
200
1000 1500
(mA)
IC
—— VCB/ VEB
f=1MHz
IE=0/IC=0
1000
100
Ta=25℃
(pF)
Ta=100℃
C
100
CAPACITANCE
COLLCETOR CURRENT
IC
(mA)
Cib
Ta=25℃
10
1
200
VCE=1V
300
400
500
600
700
BASE-EMMITER VOLTAGE
fT
——
900
1
(mV)
10
REVERSE VOLTAGE
IC
PC
300
COLLECTOR POWER DISSIPATION
PC (mW)
fT
TRANSITION FREQUENCY
10
1
0.1
1000
(MHz)
1000
VBE
800
Cob
100
10
——
V
20
(V)
Ta
250
200
150
100
50
VCE=10V
Ta=25℃
1
0
1
10
COLLECTOR CURRENT
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100
IC
0
(mA)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
A,Jun,2014
B,Sep,2014
SOT-323 Package Outline Dimensions
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
SOT-323 Suggested Pad Layout
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3
B,Sep,2014
A,Jun,2014
SOT-323 Tape and Reel
www.cj-elec.com
4
B,Sep,2014
A,Jun,2014
SS8550 H(200-350)(SOT-23) 价格&库存
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